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Atomic Theory Of Phononic Gaps In Nano-patterned Semiconductors

Hepplestone, SP; Srivastava, GP; (2009) Atomic Theory Of Phononic Gaps In Nano-patterned Semiconductors. In: Singh, MR and Lipson, RH, (eds.) TRANSPORT AND OPTICAL PROPERTIES OF NANOMATERIALS. (pp. 135 - 142). AMER INST PHYSICS

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Abstract

An Enhanced Adiabatic Bond Charge Model is applied to a variety of semiconductor nano-patterned structures to examine their phononic behaviour. We apply this approach to determine the locations and widths of phononic band gaps, and negative phonon group velocities, for both longitudinal acoustic and transverse acoustic modes, in the nanosized Si(4 nm)/Si0.4Ge0.6(8 nm)[001] supertattice. In addition to reproducing the LA band gaps observed recently by Ezzahari and co-workers using a picosecond technique, we predict this superlattice to be a true one-dimensional phononic system in the hypersonic range. We show that embedded wires of Ge in Si can be either a one-dimensional or an optical phononic crystal and that so wires embedded in Si can also be a 2D phononic crystal.

Type: Proceedings paper
Title: Atomic Theory Of Phononic Gaps In Nano-patterned Semiconductors
Event: International Conference on Transport and Optical Properties of Nanomaterials (ICTOPON 2009)
Location: Allahabad, INDIA
Dates: 2009-01-05 - 2009-01-08
ISBN-13: 978-0-7354-0684-1
Keywords: Phonon, Lattice Dynamics, SI, GE
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/1332943
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