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Stability of indium-oxide thin-film transistors by reactive ion beam assisted deposition

Vygranenko, Y; Wang, K; Chaji, R; Vieira, M; Robertson, J; Nathan, A; (2009) Stability of indium-oxide thin-film transistors by reactive ion beam assisted deposition. In: THIN SOLID FILMS. (pp. 6341 - 6344). ELSEVIER SCIENCE SA

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Abstract

This work reports on the performance and stability of bottom-gate In2O3-TFTs with PECVD silicon dioxide gate dielectric. A highly-resistive amorphous In2O3 channel layer was deposited at room temperature by reactive ion beam assisted evaporation (IBAE). The field-effect mobility of the n-channel TFT is 33 cm(2)/V-s, along with an ON/OFF current ratio of 10(9), and threshold voltage of 2 V. Device stability was demonstrated through measurement of the threshold voltage shift during long-term gate bias-stress and current stress experiments. Device performance, including stability, together with low-temperature processing, makes the indium-oxide TFT an attractive candidate for flexible transparent electronics, and display applications. (C) 2009 Elsevier B.V. All rights reserved.

Type: Proceedings paper
Title: Stability of indium-oxide thin-film transistors by reactive ion beam assisted deposition
Event: 6th Symposium on Thin Films for Large Area Electronics held at the E-MRS Spring Meeting
Location: Strasbourg, FRANCE
Dates: 2008-05-26 - 2008-05-30
DOI: 10.1016/j.tsf.2009.02.108
Keywords: Electronic devices, Indium oxide, Silicon oxide, PERFORMANCE
UCL classification: UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering
URI: http://discovery.ucl.ac.uk/id/eprint/1330962
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