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Excited states of the vacancy in diamond: shallow states of a deep defect

STONEHAM, A; Mainwood, A; (1997) Excited states of the vacancy in diamond: shallow states of a deep defect. In: Ammerlaan, CAJ and Pajot, B, (eds.) (pp. pp. 165-170). World Scientific Publishing Co Pte Ltd: Singapore.

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Abstract

Focussing on the specific physical and chemical properties of centres in semiconductors with shallow energy levels and electronic distributions of an extended size, this volume includes reports on the most advanced experimental and theoretical methods for identifying and further characterizing these materials. Attention is given to such topics as shallow-level centres in host semiconductors of lower dimensionality, centres in wide-bandgap semiconductors, shallow excited states of centres with deep ground states, passivation of centres, and other aspects of impurity control during crystal growth and processing with its relevance to applications.

Type: Proceedings paper
Title: Excited states of the vacancy in diamond: shallow states of a deep defect
ISBN: 9810229283
ISBN-13: 9789810229283
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/1322609
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