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Electronic conduction in amorphous and polycrystalline zinc-indium oxide films

Kuznetsov, VL; O'Neil, DH; Pepper, M; Edwards, PP; (2010) Electronic conduction in amorphous and polycrystalline zinc-indium oxide films. APPL PHYS LETT , 97 (26) , Article 262117. 10.1063/1.3533382.

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Abstract

We report on the electronic properties of both amorphous and polycrystalline zinc-indium oxide thin films with similar degenerate electron concentrations just above the insulator-to-metal transition. The highest electron mobilities occur in amorphous oxide films deposited at 100 degrees C; for these, structural disorder is on a spatial scale much smaller than the characteristic electron wavelength (similar to 3 nm) of the conduction electron gas. For polycrystalline films fabricated at 200-300 degrees C enhanced electron scattering occurs at evolving grain boundaries when the grain size is comparable to the electron wavelength. Larger, highly crystalline grains form for deposition at 500 degrees C with concomitant higher carrier mobilities. (C) 2010 American Institute of Physics. [doi:10.1063/1.3533382]

Type: Article
Title: Electronic conduction in amorphous and polycrystalline zinc-indium oxide films
DOI: 10.1063/1.3533382
Keywords: OPTICAL-PROPERTIES, THIN-FILMS, SEMICONDUCTORS
UCL classification: UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering
URI: http://discovery.ucl.ac.uk/id/eprint/1322391
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