Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors.
APPL PHYS LETT
, Article 142108. 10.1063/1.3499360.
We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at the Si-SiO2 interface. The amplitude of these fluctuations is controlled by both the density of ions in the oxide and their position relative to the Si-SiO2 interface. Owing to the high mobility of the ions at room temperature, it is possible to move them with the application of a suitable electric field. We show that, in this configuration, such a device can be used to control both the disorder and the electron-electron interaction strength at the Si-SiO2 interface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3499360]
|Title:||Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors|
|Keywords:||2-DIMENSIONAL IMPURITY BAND, INSULATOR-TRANSITION, 2 DIMENSIONS, INVERSION-LAYERS, MAGNETIC-FIELD, CONDUCTANCE OSCILLATIONS, HOPPING CONDUCTIVITY, ANDERSON TRANSITION, COULOMB GAP, TRANSPORT|
|UCL classification:||UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Engineering Science
UCL > School of BEAMS > Faculty of Maths and Physical Sciences
UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
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