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Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors

Ferrus, T; George, R; Barnes, CHW; Pepper, M; (2010) Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors. APPL PHYS LETT , 97 (14) , Article 142108. 10.1063/1.3499360.

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Abstract

We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at the Si-SiO2 interface. The amplitude of these fluctuations is controlled by both the density of ions in the oxide and their position relative to the Si-SiO2 interface. Owing to the high mobility of the ions at room temperature, it is possible to move them with the application of a suitable electric field. We show that, in this configuration, such a device can be used to control both the disorder and the electron-electron interaction strength at the Si-SiO2 interface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3499360]

Type:Article
Title:Disorder and electron interaction control in low-doped silicon metal-oxide-semiconductor field effect transistors
DOI:10.1063/1.3499360
Keywords:2-DIMENSIONAL IMPURITY BAND, INSULATOR-TRANSITION, 2 DIMENSIONS, INVERSION-LAYERS, MAGNETIC-FIELD, CONDUCTANCE OSCILLATIONS, HOPPING CONDUCTIVITY, ANDERSON TRANSITION, COULOMB GAP, TRANSPORT
UCL classification:UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering
UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology

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