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An accurate high-speed single-electron quantum dot pump

Giblin, SP; Wright, SJ; Fletcher, JD; Kataoka, M; Pepper, M; Janssen, TJBM; ... Jones, GAC; + view all (2010) An accurate high-speed single-electron quantum dot pump. New Journal of Physics , 12 , Article 073013. 10.1088/1367-2630/12/7/073013. Green open access

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Using standard microfabrication techniques, it is now possible to construct devices that appear to reliably manipulate electrons one at a time. These devices have potential use as building blocks in quantum computing devices, or as a standard of electrical current derived only from a frequency and the fundamental charge. To date, the error rate in semiconductor 'tuneable-barrier' pump devices, those which show most promise for high-frequency operation, have not been tested in detail. We present high-accuracy measurements of the current from an etched GaAs quantum dot pump, operated at zero source-drain bias voltage with a single ac-modulated gate at 340 MHz driving the pump cycle. By comparison with a reference current derived from primary standards, we show that the electron transfer accuracy is better than 15 parts per million. High-resolution studies of the dependence of the pump current on the quantum dot tuning parameters also reveal possible deviations from a model used to describe the pumping cycle.

Title:An accurate high-speed single-electron quantum dot pump
Open access status:An open access version is available from UCL Discovery
Publisher version:http://dx.doi.org/10.1088/1367-2630/12/7/073013
Additional information:Authors, their institutions and third parties all have the same rights to reuse articles published in New Journal of Physics in accordance with the Creative Commons Attribution 3.0 Unported (CC-BY) license. This allows the articles to be shared, adapted and made commercial use of subject to appropriate attribution.
UCL classification:UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering

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