Faulks, R and Rihani, S and Beere, HE and Evans, MJ and Ritchie, DA and Pepper, M (2010) Pulsed terahertz time domain spectroscopy of vertically structured photoconductive antennas. APPL PHYS LETT , 96 (8) , Article 081106. 10.1063/1.3313940.
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Abstract
We present a terahertz (THz) photoconductive emitter structure, which employs a n-doped layer underneath a low-temperature-grown GaAs region to enable the THz transient to couple vertically through a defined mesa. A nonlinear bias dependence is observed, yielding an order in magnitude improvement in power for a mesa device with a 100 mu m(2) area over a conventional planar control reference device at 32 V and 5 mW illumination power. We relate the bias dependence of the THz signal to the breakdown voltage observed in the current-voltage characteristic. Reducing the antenna gap size through reducing the thickness of the low temperature-GaAs region below 1 mu m shows a large improvement in the bandwidth of the device, with an enhancement of the normalized intensity between 0.2 to 2 THz for a bow-tie antenna geometry.
| Type: | Article |
|---|---|
| Title: | Pulsed terahertz time domain spectroscopy of vertically structured photoconductive antennas |
| DOI: | 10.1063/1.3313940 |
| Keywords: | antennas, gallium arsenide, III-V semiconductors, photoconducting materials, semiconductor doping, TEMPERATURE-GROWN GAAS |
| UCL classification: | UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering |
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