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Enhanced terahertz emission from a multilayered low temperature grown GaAs structure

Rihani, S; Faulks, R; Beere, HE; Farrer, I; Evans, M; Ritchie, DA; Pepper, M; (2010) Enhanced terahertz emission from a multilayered low temperature grown GaAs structure. APPL PHYS LETT , 96 (9) , Article 091101. 10.1063/1.3332587.

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Abstract

We report the use of a multilayered structure comprising of alternating layers of low temperature grown GaAs and high temperature grown AlAs, as a terahertz (THz) photoconductive antenna emitter and receiver. Devices based on 10x10 mu m(2) mesa defined photoconductive gaps were fabricated on the multilayered structure, and a comparison made to conventional planar devices. The mesa defined photoconductive antennas allowed successive contact through the multilayered structure, which resulted in an increase in THz emission power and detection responsivity with increasing number of layers in contact with the antenna electrodes. A comparison with a conventional single layered device, processed in an identical mesa geometry, confirmed that the enhancement in THz emission is solely due to the multilayered nature of the device, whereas the improved receiver performance can be partially attributed to the mesa geometry.

Type:Article
Title:Enhanced terahertz emission from a multilayered low temperature grown GaAs structure
DOI:10.1063/1.3332587
Keywords:antennas, gallium arsenide, III-V semiconductors, multilayers, photoconducting devices, OUTPUT POWER
UCL classification:UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering

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