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MBE growth and patterned backgating of electron-hole bilayer structures

Farrer, I; Croxall, AF; Das Gupta, K; Nicoll, CA; Beere, HE; Thangaraj, M; ... Pepper, M; + view all (2009) MBE growth and patterned backgating of electron-hole bilayer structures. J CRYST GROWTH , 311 (7) 1988 - 1993. 10.1016/j.jcrysgro.2008.09.187.

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Abstract

We report on the development of backgated independently contacted two-dimensional electron-hole bilayer devices suitable for carrying out transport measurements at low temperatures. A method for creating patterned backgates using conventional photolithography and a single-sided aligner is outlined along with the use of a conventional digital camera and commercially available infrared LEDs for checking the backside lithography at stages during this process. (C) 2008 Elsevier B.V. All rights reserved.

Type:Article
Title:MBE growth and patterned backgating of electron-hole bilayer structures
DOI:10.1016/j.jcrysgro.2008.09.187
Keywords:Coulomb drag, Molecular beam epitaxy, Electron-hole bilayer devices, Patterned backgate, DRAG, HETEROSTRUCTURES, SYSTEMS, GASES
UCL classification:UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering

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