Farrer, I; Croxall, AF; Das Gupta, K; Nicoll, CA; Beere, HE; Thangaraj, M; ... Pepper, M; + view all Farrer, I; Croxall, AF; Das Gupta, K; Nicoll, CA; Beere, HE; Thangaraj, M; Waldie, J; Ritchie, DA; Pepper, M; - view fewer (2009) MBE growth and patterned backgating of electron-hole bilayer structures. J CRYST GROWTH , 311 (7) 1988 - 1993. 10.1016/j.jcrysgro.2008.09.187.
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We report on the development of backgated independently contacted two-dimensional electron-hole bilayer devices suitable for carrying out transport measurements at low temperatures. A method for creating patterned backgates using conventional photolithography and a single-sided aligner is outlined along with the use of a conventional digital camera and commercially available infrared LEDs for checking the backside lithography at stages during this process. (C) 2008 Elsevier B.V. All rights reserved.
|Title:||MBE growth and patterned backgating of electron-hole bilayer structures|
|Keywords:||Coulomb drag, Molecular beam epitaxy, Electron-hole bilayer devices, Patterned backgate, DRAG, HETEROSTRUCTURES, SYSTEMS, GASES|
|UCL classification:||UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering|
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