Sfigakis, F and Das Gupta, K and Sarkozy, S and Farrer, I and Ritchie, DA and Pepper, M and Jones, GAC (2010) Benefits of using undoped GaAs/AlGaAs heterostructures: A case study of the zero-bias bias anomaly in quantum wires. In: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. (pp. 1200 - 1204). ELSEVIER SCIENCE BV
Full text not available from this repository.
Abstract
We use quantum wires fabricated on undoped GaAs/AlGaAs heterostructures in which the average impurity separation is greater than the device size to compare the behaviour of the zero-bias anomaly against predictions from Kondo and spin polarisation models. Cleanliness and reproducibility are significantly improved in our undoped devices when compared to our doped devices. (c) 2009 Elsevier B.V. All rights reserved.
| Type: | Proceedings paper |
|---|---|
| Title: | Benefits of using undoped GaAs/AlGaAs heterostructures: A case study of the zero-bias bias anomaly in quantum wires |
| Event: | 18th International Conference on Electronic Properties of Two-Dimensional Systems |
| Location: | Kobe, JAPAN |
| Dates: | 2009-07-19 - 2009-07-24 |
| DOI: | 10.1016/j.physe.2009.12.018 |
| Keywords: | 0.7 structure, 0.7 anomaly, Zero-bias anomaly, Kondo, DIMENSIONAL ELECTRON-GAS, POINT CONTACTS, KONDO, CONDUCTANCE, LIMIT |
| UCL classification: | UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering |
Archive Staff Only: edit this record