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Benefits of using undoped GaAs/AlGaAs heterostructures: A case study of the zero-bias bias anomaly in quantum wires

Sfigakis, F; Das Gupta, K; Sarkozy, S; Farrer, I; Ritchie, DA; Pepper, M; Jones, GAC; (2010) Benefits of using undoped GaAs/AlGaAs heterostructures: A case study of the zero-bias bias anomaly in quantum wires. In: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES. (pp. 1200 - 1204). ELSEVIER SCIENCE BV

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Abstract

We use quantum wires fabricated on undoped GaAs/AlGaAs heterostructures in which the average impurity separation is greater than the device size to compare the behaviour of the zero-bias anomaly against predictions from Kondo and spin polarisation models. Cleanliness and reproducibility are significantly improved in our undoped devices when compared to our doped devices. (c) 2009 Elsevier B.V. All rights reserved.

Type:Proceedings paper
Title:Benefits of using undoped GaAs/AlGaAs heterostructures: A case study of the zero-bias bias anomaly in quantum wires
Event:18th International Conference on Electronic Properties of Two-Dimensional Systems
Location:Kobe, JAPAN
Dates:2009-07-19 - 2009-07-24
DOI:10.1016/j.physe.2009.12.018
Keywords:0.7 structure, 0.7 anomaly, Zero-bias anomaly, Kondo, DIMENSIONAL ELECTRON-GAS, POINT CONTACTS, KONDO, CONDUCTANCE, LIMIT
UCL classification:UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering

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