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Zero-bias anomaly in quantum wires

Sarkozy, S; Sfigakis, F; Das Gupta, K; Farrer, I; Ritchie, DA; Jones, GAC; Pepper, M; (2009) Zero-bias anomaly in quantum wires. PHYS REV B , 79 (16) , Article 161307. 10.1103/PhysRevB.79.161307.

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We use quantum wires fabricated on undoped GaAs/AlGaAs heterostructures in which the average impurity separation is greater than the device size to compare the behavior of the zero-bias anomaly against predictions from Kondo and spin-polarization models. Both theories display shortcomings, the most dramatic of which is the linear electron-density dependence of the zero-bias anomaly spin splitting at fixed magnetic field B and the suppression of the Zeeman effect at pinch off.

Type: Article
Title: Zero-bias anomaly in quantum wires
DOI: 10.1103/PhysRevB.79.161307
Keywords: gallium arsenide, Kondo effect, semiconductor heterojunctions, semiconductor quantum wires, spin polarised transport, Zeeman effect, SADDLE-POINT CONSTRICTION, DIMENSIONAL ELECTRON-GAS, CONDUCTANCE, CONTACTS, TRANSPORT, LIMIT, DOTS
URI: http://discovery.ucl.ac.uk/id/eprint/1311660
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