Baenninger, M and Ghosh, A and Pepper, M and Beere, HE and Farrer, I and Ritchie, DA (2009) Low-Temperature Breakdown of the Insulating Phase in Two-Dimensional Electron Systems. In: Caldas, MJ and Studart, N, (eds.) PHYSICS OF SEMICONDUCTORS. (pp. 231 - 232). AMER INST PHYSICS
Full text not available from this repository.
Abstract
We present experimental evidence of a breakdown of localization at low temperatures in strongly interacting two-dimensional electrons systems with moderate background disorder. The observation is manifested by a transition from an activated transport behavior at high temperature to a metal-like (dp/dT>0) behavior at low temperature T less than or similar to 1 K. The results have been achieved in mesoscopic two-dimensional electron systems (2DES), where the disorder strength was systematically
| Type: | Proceedings paper |
|---|---|
| Title: | Low-Temperature Breakdown of the Insulating Phase in Two-Dimensional Electron Systems |
| Event: | 29th International Conference on Physics of Semiconductors |
| Location: | Rio de Janeiro, BRAZIL |
| Dates: | 2008-07-27 - 2008-08-01 |
| ISBN-13: | 978-0-7354-0736-7 |
| Keywords: | Two-dimensional electron systems, metal-insulator transition, disorder, localization, electron-electron interactions |
| UCL classification: | UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering |
Archive Staff Only: edit this record

