Low-Temperature Breakdown of the Insulating Phase in Two-Dimensional Electron Systems.
In: Caldas, MJ and Studart, N, (eds.)
PHYSICS OF SEMICONDUCTORS.
(pp. 231 - 232).
AMER INST PHYSICS
We present experimental evidence of a breakdown of localization at low temperatures in strongly interacting two-dimensional electrons systems with moderate background disorder. The observation is manifested by a transition from an activated transport behavior at high temperature to a metal-like (dp/dT>0) behavior at low temperature T less than or similar to 1 K. The results have been achieved in mesoscopic two-dimensional electron systems (2DES), where the disorder strength was systematically
|Title:||Low-Temperature Breakdown of the Insulating Phase in Two-Dimensional Electron Systems|
|Event:||29th International Conference on Physics of Semiconductors|
|Location:||Rio de Janeiro, BRAZIL|
|Dates:||2008-07-27 - 2008-08-01|
|Keywords:||Two-dimensional electron systems, metal-insulator transition, disorder, localization, electron-electron interactions|
|UCL classification:||UCL > School of BEAMS > Faculty of Engineering Science
UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering
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