Ferrus, T and George, R and Barnes, CHW and Lumpkin, N and Paul, DJ and Pepper, M (2007) Magnetoconductivity of Hubbard bands induced in silicon MOSFETs. PHYSICA B , 400 (1-2) 218 - 223. 10.1016/j.physb.2007.07.011.
Full text not available from this repository.
Abstract
Sodium impurities are diffused electrically to the oxide-semiconductor interface of a silicon MOSFET to create an impurity band. At low temperature and at low electron density, the band is split into an upper and a lower sections under the influence of Coulomb interactions. We used magnetoconductivity measurements to provide evidence for the existence of Hubbard bands and determine the nature of the states in each band. (C) 2007 Elsevier B.V. All rights reserved.
| Type: | Article |
|---|---|
| Title: | Magnetoconductivity of Hubbard bands induced in silicon MOSFETs |
| DOI: | 10.1016/j.physb.2007.07.011 |
| Keywords: | silicon MOSFET, sodium, magnetoconductivity, localization, hopping, interference, IMPURITY BAND, MAGNETIC-FIELD, CONDUCTION, MAGNETORESISTANCE, INSULATORS, TRANSPORT |
| UCL classification: | UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology |
Archive Staff Only: edit this record