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Carrier Relaxation in InAs/InGaAs Dots-in-a-Well Structures

Chen, R; LIU, H; Sun, H; (2010) Carrier Relaxation in InAs/InGaAs Dots-in-a-Well Structures. JAPANESE JOURNAL OF APPLIED PHYSICS , 49 (2) 10.1143/JJAP.49.020203.

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We report on the mechanism of electronic structure and different carrier relaxation processes in InAs/InxGa1-xAs dots-in-a-well (DWELL) structure investigated by comprehensive spectroscopic characterization. Selectively excited photoluminescence and photoluminescence excitation analyses reveal that when excited at different photon energies, carriers relax to the ground state of the quantum dots by distinct schemes. Our investigation clearly manifests the roles of longitudinal optical phonons and absorption continuum states played in the carrier relaxation process in DWELL structures.

Type: Article
Title: Carrier Relaxation in InAs/InGaAs Dots-in-a-Well Structures
Location: Japan
DOI: 10.1143/JJAP.49.020203
UCL classification: UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Engineering Science
URI: http://discovery.ucl.ac.uk/id/eprint/1309580
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