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Electronic energy levels and carrier dynamics in InAs/InGaAs dots-in-a-well structure investigated by optical spectroscopy

Chen, R; Liu, HY; Sun, HD; (2010) Electronic energy levels and carrier dynamics in InAs/InGaAs dots-in-a-well structure investigated by optical spectroscopy. JOURNAL OF APPLIED PHYSICS , 107 (1) , Article ARTN 013513. 10.1063/1.3277049.

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Type:Article
Title:Electronic energy levels and carrier dynamics in InAs/InGaAs dots-in-a-well structure investigated by optical spectroscopy
DOI:10.1063/1.3277049
Keywords:electronic structure, gallium arsenide, III-V semiconductors, indium compounds, photoluminescence, semiconductor quantum dots, semiconductor quantum wells
UCL classification:UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering

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