Electronic energy levels and carrier dynamics in InAs/InGaAs dots-in-a-well structure investigated by optical spectroscopy.
JOURNAL OF APPLIED PHYSICS
, Article ARTN 013513. 10.1063/1.3277049.
|Title:||Electronic energy levels and carrier dynamics in InAs/InGaAs dots-in-a-well structure investigated by optical spectroscopy|
|Keywords:||electronic structure, gallium arsenide, III-V semiconductors, indium compounds, photoluminescence, semiconductor quantum dots, semiconductor quantum wells|
|UCL classification:||UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering|
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