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Electronic energy levels and carrier dynamics in InAs/InGaAs dots-in-a-well structure investigated by optical spectroscopy

Chen, R; Liu, HY; Sun, HD; (2010) Electronic energy levels and carrier dynamics in InAs/InGaAs dots-in-a-well structure investigated by optical spectroscopy. JOURNAL OF APPLIED PHYSICS , 107 (1) 10.1063/1.3277049.

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Type: Article
Title: Electronic energy levels and carrier dynamics in InAs/InGaAs dots-in-a-well structure investigated by optical spectroscopy
DOI: 10.1063/1.3277049
Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, electronic structure, gallium arsenide, III-V semiconductors, indium compounds, photoluminescence, semiconductor quantum dots, semiconductor quantum wells, 1.3 MU-M, ASSEMBLED QUANTUM DOTS, TEMPERATURE-DEPENDENCE, MULTIQUANTUM WELLS, PHOTOLUMINESCENCE, RELAXATION, LAYER, TRANSITIONS, GROWTH
UCL classification: UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Engineering Science
URI: http://discovery.ucl.ac.uk/id/eprint/1309579
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