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Modelling radiation-effects in semiconductor lasers for use in SLHC experiments

Stejskal, P; Detraz, S; Papadopoulos, S; Papakonstantinou, I; Sigaud, C; Soos, C; ... Vasey, F; + view all (2010) Modelling radiation-effects in semiconductor lasers for use in SLHC experiments. In: JOURNAL OF INSTRUMENTATION. (pp. ? - ?). IOP PUBLISHING LTD

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Abstract

Optical link components in the SLHC inner detectors are to be exposed to intense radiation fields during operation, and, hence, their qualification in terms of radiation tolerance is required. We have created a model that describes a semiconductor laser undergoing irradiation to enable the extrapolation to full lifetime total fluences from lower fluence radiation tests. This model uses a rate-equation approach with modified gain calculation that takes thermal rollover into account. The model is used to fit experimental data obtained during high-fluence (in excess of 10(15) particles/cm(2)) neutron and pion irradiation tests and evaluate its prediction capability.

Type:Proceedings paper
Title:Modelling radiation-effects in semiconductor lasers for use in SLHC experiments
Event:Topical Workshop on Electronics for Particle Physics
Location:Aachen, GERMANY
Dates:2010-09-20 - 2010-09-24
DOI:10.1088/1748-0221/5/12/C12033
Keywords:Radiation damage to electronic components, Optical detector readout concepts, Radiation-hard electronics, Front-end electronics for detector readout, DYNAMICS
UCL classification:UCL > School of BEAMS > Faculty of Engineering Science > Electronic and Electrical Engineering

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