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The infra-red photoresponse of erbium-doped silicon nanocrystals

Kenyon, A; Bhamber, SS; Pitt, CW; (2003) The infra-red photoresponse of erbium-doped silicon nanocrystals. In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. (pp. 230 - 235). ELSEVIER SCIENCE SA

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Abstract

We have exploited the interaction between erbium ions and silicon nanoclusters to probe the photoresponse of erbium-doped silicon nanocrystals in the spectral region around 1.5 mum. We have produced an MOS device in which the oxide layer has been implanted with both erbium and silicon and annealed to produce silicon nanocrystals. Upon illumination with a 1480 nm laser diode, interaction between the nanocrystals and the rare-earth ions results in a modification of the conductivity of the oxide that enables a current to flow when a voltage is applied across the oxide layer. (C) 2003 Elsevier B.V. All rights reserved.

Type: Proceedings paper
Title: The infra-red photoresponse of erbium-doped silicon nanocrystals
Event: Spring Meeting of the European-Materials-Research-Society (EMRS)
Location: STRASBOURG, FRANCE
Dates: 2003-06-10 - 2003-06-13
DOI: 10.1016/j.mseb.2003.08.051
Keywords: silicon nanocrystals, erbium, photoluminescence, SI NANOCRYSTALS, WAVE-GUIDE, MU-M, EXCITATION, ER3+, ELECTROLUMINESCENCE, EFFICIENCY, DIODES, FILMS, IONS
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/1306869
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