Modelling radiation damage to ESA's Gaia satellite CCDs - art. no. 70211P.
In: Dorn, DA and Holland, AD, (eds.)
HIGH ENERGY, OPTICAL, AND INFRARED DETECTORS FOR ASTRONOMY III.
(pp. P211 - P211).
SPIE-INT SOC OPTICAL ENGINEERING
The Gaia satellite is a high-precision astrometry, photometry and spectroscopic ESA cornerstone mission, currently scheduled for launch in late 2011. Its primary science drivers are the composition, formation and evolution of the Galaxy. Gaia will achieve its scientific requirements with detailed calibration and correction for radiation damage. Microscopic models of Gaia's CCDs are being developed to simulate the charge trapping effect of radiation damage, which causes charge transfer inefficiency. The key to calculating the probability of a photoelectron being captured by a trap is the 3D electron density within each CCD pixel. However, this has not been physically modelled for Gaia CCD pixels. In this paper, the First of a series, we motivate the need for such specialised 3D device modelling and outline how its future results will fit into Gaia's overall radiation calibration strategy.
|Title:||Modelling radiation damage to ESA's Gaia satellite CCDs - art. no. 70211P|
|Event:||Conference on High Energy, Optical, and Infrared Detectors for Astronomy III|
|Dates:||2008-06-23 - 2008-06-26|
|Keywords:||Astrometry, Gaia, Focal plane, CCDs|
|UCL classification:||UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Maths and Physical Sciences
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