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Curvature-induced electron localization in developable Mobius-like nanostructures

Korte, AP; van der Heijden, GHM; (2009) Curvature-induced electron localization in developable Mobius-like nanostructures. J PHYS-CONDENS MAT , 21 (49) , Article 495301. 10.1088/0953-8984/21/49/495301.

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Abstract

We study curvature effects and localization of non-interacting electrons confined to developable one-sided elastic sheets motivated by recent nanostructured origami techniques for creating and folding extremely thin membrane structures. The most famous one-sided sheet is the Mobius strip but the theory we develop allows for arbitrary linking number. Unlike previous work in the literature we do not assume a shape for the elastic structures. Rather, we find the shape by minimizing the elastic energy, i.e., solving the Euler-Lagrange equations for the bending energy functional. This shape varies with the aspect ratio of the sheet and affects the potential experienced by the particles. Depending on the link there is a number of singular points on the edge of the structure where the bending energy density goes to infinity, leading to deep potential wells. The inverse participation ratio is used to show that electrons are increasingly localized to the higher-curvature regions of the higher-width structures, where sharp creases radiating out from the singular points could form channels for particle transport. Our geometric formulation could be used to study transport properties of Mobius strips and other components in nanoscale devices.

Type:Article
Title:Curvature-induced electron localization in developable Mobius-like nanostructures
DOI:10.1088/0953-8984/21/49/495301
Keywords:QUANTUM-MECHANICS, SINGLE-VALUEDNESS, TRAPPED MODES, STRIP, STATES, SURFACES, RIBBON
UCL classification:UCL > School of BEAMS > Faculty of Engineering Science > Civil, Environmental and Geomatic Engineering
UCL > School of BEAMS > Faculty of the Built Environment > Centre for Advanced Spatial Analysis

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