The dual source APCVD of titanium nitride thin films from reaction of hexamethyldisilazane and titanium tetrachloride.
J MATER CHEM
1906 - 1909.
Atmospheric pressure chemical vapour deposition reaction of TiCl4 and NH(SiMe3)(2) at 300-550 degreesC produced films of titanium nitride on glass substrates. The films were gold or purple/gold in colour, highly reflective in the infrared but with significant transmittance in the visible. Growth rates were typically 300 nm min(-1) at 550 degreesC. The films were uniform, adhesive, abrasive resistant, conformal and hard, being resistant to scratching with a steel scalpel. They also showed no change in optical properties on immersion in common solvents or dilute acids or alkalis (2 M). X-Ray diffraction showed preferred growth in the (2 0 0) direction, typical cell constants of 4.23(1) Angstrom and a crystallite size of ca. 200 Angstrom. Raman spectra matched powder samples. SEM indicated the films were composed of ca. 200 nm particles. EDAX and electron probe studies showed no carbon or silicon impurities and a titanium to nitrogen ratio corresponding to TiN0.95. X-Ray photoelectron spectroscopy gave binding energy shifts for Ti-2p3/2 and N-1s at 455.8 and 396.9 eV respectively. The sheet resistance of the films showed increase conductivity with deposition temperature. The titanium nitride films showed potential for heat mirror applications.
|Title:||The dual source APCVD of titanium nitride thin films from reaction of hexamethyldisilazane and titanium tetrachloride|
|Keywords:||CHEMICAL-VAPOR-DEPOSITION, TIN, GLASS|
|UCL classification:||UCL > School of BEAMS > Faculty of Maths and Physical Sciences > Chemistry|
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