Oxygen Vacancy Origin of the Surface Band-Gap State of TiO2(110).
PHYS REV LETT
, Article 036806. 10.1103/PhysRevLett.104.036806.
Scanning tunneling microscopy and photoemission spectroscopy have been used to determine the origin of the band-gap state in rutile TiO2(110). This state has long been attributed to oxygen vacancies (O-b vac). However, recently an alternative origin has been suggested, namely, subsurface interstitial Ti species. Here, we use electron bombardment to vary the O-b vac density while monitoring the band-gap state with photoemission spectroscopy. Our results show that O-b vac make the dominant contribution to the photoemission peak and that its magnitude is directly proportional to the O-b vac density.
|Title:||Oxygen Vacancy Origin of the Surface Band-Gap State of TiO2(110)|
|Open access status:||An open access version is available from UCL Discovery|
|Additional information:||© 2010 The American Physical Society|
|Keywords:||RUTILE TIO2(110), OH GROUPS, TIO2, DISSOCIATION, O-2, WATER, REACTIVITY, DEFECTS, SITES, H2O|
|UCL classification:||UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Maths and Physical Sciences
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