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Valence surface electronic states on Ge(001)

Radny, MW; Shah, GA; Schofield, SR; Smith, PV; Curson, NJ; (2008) Valence surface electronic states on Ge(001). PHYS REV LETT , 100 (24) , Article 246807. 10.1103/PhysRevLett.100.246807. Green open access

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Abstract

The optical, electrical, and chemical properties of semiconductor surfaces are largely determined by their electronic states close to the Fermi level (E-F). We use scanning tunneling microscopy and density functional theory to clarify the fundamental nature of the ground state Ge(001) electronic structure near E-F, and resolve previously contradictory photoemission and tunneling spectroscopy data. The highest energy occupied surface states were found to be exclusively back bond states, in contrast to the Si(001) surface, where dangling bond states also lie at the top of the valence band.

Type: Article
Title: Valence surface electronic states on Ge(001)
Open access status: An open access version is available from UCL Discovery
DOI: 10.1103/PhysRevLett.100.246807
Publisher version: http://dx.doi.org/10.1103/PhysRevLett.100.246807
Language: English
Additional information: © 2008 The American Physical Society
Keywords: X-RAY-DIFFRACTION, RECONSTRUCTION, X-1
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/126469
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