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The influence of tensile strain on differential gain and Auger recombination in 1.5-mu m multiple-quantum-well lasers

Jones, G; Smith, AD; O'Reilly, EP; Silver, M; Briggs, ATR; Fice, MJ; Adams, AR; ... Vranic, A; + view all (1998) The influence of tensile strain on differential gain and Auger recombination in 1.5-mu m multiple-quantum-well lasers. IEEE J QUANTUM ELECT , 34 (5) 822 - 833.

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Abstract

A systematic study has been undertaken including growth, characterization, and modeling of tensile-strained multiple-quantum-well (MQW) lasers with emission wavelengths in the neighborhood of 1.5 mu m. The laser threshold increases between 0% and -0.5% mismatch, switching from TE to TM polarized emission at -0.5%, then decreases to -1.3% mismatch, with TM polarized emission. The threshold current density has a much weaker dependence on inverse cavity length in the highly tensile-strained lasers than has previously been observed for lattice-matched and compressive lasers emitting in the same wavelength range. We present theoretical calculations which show that the observed differences are well explained, both qualitatively and quantitatively, by the calculated variation with strain of the optical confinement factor Gamma and the differential gain at transparency, dg/dn (n(tr)). More detailed comparison with experiment suggests that Auger recombination provides the dominant contribution to the threshold current density. Estimated Auger coefficients C are in good agreement with those previously obtained using other techniques.

Type: Article
Title: The influence of tensile strain on differential gain and Auger recombination in 1.5-mu m multiple-quantum-well lasers
Keywords: Auger recombination, epitaxial growth, quantum-well lasers, semiconductor device modeling, semi-conductor lasers, HIGH-TEMPERATURE OPERATION, SEMICONDUCTOR-LASERS, BAND-STRUCTURE, MU-M, SENSITIVITY, INGAAS, SUPPRESSION, MECHANISMS, GROWTH, DIODES
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/118474
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