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Phosphine dissociation on the Si(001) surface

Wilson, HF; Warschkow, O; Marks, NA; Schofield, SR; Curson, NJ; Smith, PV; Radny, MW; (2004) Phosphine dissociation on the Si(001) surface. PHYS REV LETT , 93 (22) , Article 226102. 10.1103/PhysRevLett.93.226102. Green open access

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Abstract

Density functional calculations are performed to identify features observed in STM experiments after phosphine (PH3) dosing of the Si(001) surface. On the basis of a comprehensive survey of possible structures, energetics, and simulated STM images, three prominent STM features are assigned to structures containing surface bound PH2, PH, and P, respectively. Collectively, the assigned features outline for the first time a detailed mechanism of PH3 dissociation and P incorporation on Si(001).

Type: Article
Title: Phosphine dissociation on the Si(001) surface
Open access status: An open access version is available from UCL Discovery
DOI: 10.1103/PhysRevLett.93.226102
Publisher version: http://dx.doi.org/10.1103/PhysRevLett.93.226102
Language: English
Additional information: 2004 The American Physical Society
Keywords: MOLECULAR-DYNAMICS, ADSORPTION, SI(100), PH3, SILICON, STM
UCL classification: UCL > School of BEAMS > Faculty of Maths and Physical Sciences
UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
UCL > School of BEAMS > Faculty of Maths and Physical Sciences > Physics and Astronomy
URI: http://discovery.ucl.ac.uk/id/eprint/118428
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