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Crystal and electronic band structure of Cu2ZnSnX4 (X=S and Se) photovoltaic absorbers: First-principles insights

Chen, SY; Gong, XG; Walsh, A; Wei, SH; (2009) Crystal and electronic band structure of Cu2ZnSnX4 (X=S and Se) photovoltaic absorbers: First-principles insights. APPL PHYS LETT , 94 (4) , Article 041903. 10.1063/1.3074499.

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Abstract

The structural and electronic properties of Cu2ZnSnS4 and Cu2ZnSnSe4 are studied using first-principles calculations. We find that the low energy crystal structure obeys the octet rule and is the kesterite (KS) structure. However, the stannite or partially disordered KS structures can also exist in synthesized samples due to the small energy cost. We find that the dependence of the band structure on the (Cu,Zn) cation ordering is weak and predict that the band gap of Cu2ZnSnSe4 should be on the order of 1.0 eV and not 1.5 eV as was reported in previous absorption measurements.

Type:Article
Title:Crystal and electronic band structure of Cu2ZnSnX4 (X=S and Se) photovoltaic absorbers: First-principles insights
DOI:10.1063/1.3074499
Keywords:band structure, copper compounds, crystal structure, photovoltaic effects, wide band gap semiconductors, zinc compounds, PULSED-LASER DEPOSITION, THIN-FILMS, OPTICAL-PROPERTIES, SOLAR-CELLS, ALLOYS
UCL classification:UCL > School of BEAMS > Faculty of Maths and Physical Sciences > Chemistry

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