Gardener, JA; Liaw, I; Aeppli, G; Boyd, IW; Chater, RJ; Jones, TS; ... Heutz, S; + view all Gardener, JA; Liaw, I; Aeppli, G; Boyd, IW; Chater, RJ; Jones, TS; McPhail, DS; Sankar, G; Stoneham, AM; Sikora, M; Thornton, G; Heutz, S; - view fewer (2010) A novel route for the inclusion of metal dopants in silicon. NANOTECHNOLOGY , 21 (2) , Article 025304. 10.1088/0957-4484/21/2/025304.
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We report a new method for introducing metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry and x-ray absorption spectroscopy show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basis of a generic low-cost, low-temperature technology that could lead to the creation of ordered dopant arrays.
|Title:||A novel route for the inclusion of metal dopants in silicon|
|Open access status:||An open access version is available from UCL Discovery|
|Additional information:||Text made available to UCL Discovery by kind permission of IOP Publishing, 2012|
|Keywords:||PHTHALOCYANINE THIN-FILMS, ION MASS-SPECTROMETRY, MANGANESE, OXYGEN, GAAS, LAMP, MN, SI|
|UCL classification:||UCL > School of BEAMS > Faculty of Maths and Physical Sciences > Chemistry|
UCL > School of BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
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