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LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF METALLIC-FILMS OF IRON, MANGANESE, COBALT, COPPER, GERMANIUM AND TIN EMPLOYING BIS(TRIMETHYL)SILYLAMIDO COMPLEXES, M(N(SIME(3))(2))(N)

BAXTER, DV; CHISHOLM, MH; GAMA, GJ; HECTOR, AL; PARKIN, IP; (1995) LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF METALLIC-FILMS OF IRON, MANGANESE, COBALT, COPPER, GERMANIUM AND TIN EMPLOYING BIS(TRIMETHYL)SILYLAMIDO COMPLEXES, M(N(SIME(3))(2))(N). CHEM VAPOR DEPOS , 1 (2) 49 - +.

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Abstract

The deposition of metallic films by chemical vapor deposition, in contrast to the use of physical methods such as evaporation or sputtering, offers the potential advantage of conformal coverage and substrate selectivity in microelectronics applications, Here, the title compounds have been used to deposit high-purity metal films and can be seen as substrate-selective precursors.

Type:Article
Title:LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF METALLIC-FILMS OF IRON, MANGANESE, COBALT, COPPER, GERMANIUM AND TIN EMPLOYING BIS(TRIMETHYL)SILYLAMIDO COMPLEXES, M(N(SIME(3))(2))(N)
UCL classification:UCL > School of BEAMS > Faculty of Maths and Physical Sciences > Chemistry

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