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Hole mobility model for Si double-gate junctionless transistors

Chen, F; Wei, K; Sha, WEI; Huang, JZ; (2018) Hole mobility model for Si double-gate junctionless transistors. In: 2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS). IEEE: Haining, China. Green open access

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Abstract

In this work, a physics based model is developed to calculate the hole mobility of ultra-thin-body double-gate junctionless transistors. Six-band k · p Schrodinger equation and ¨ Poisson equation are solved self-consistently. The obtained wavefunctions and energies are stored in look-up tables. Hole mobility can be derived using the Kubo-Greenwood formula accounting for impurity, acoustic and optical phonon, and surface roughness scattering. Initial benchmark results are shown.

Type: Proceedings paper
Title: Hole mobility model for Si double-gate junctionless transistors
Event: 2017 IEEE Electrical Design of Advanced Packaging and Systems Symposium (EDAPS)
Location: Haining, China
Dates: 14-16 December 2017
ISBN-13: 9781538612385
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/EDAPS.2017.8277054
Publisher version: https://doi.org/10.1109/EDAPS.2017.8277054
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Ionized impurity scattering , junctionless (JL) , mobility , screening , surface roughness , ultra-thin body
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/10068594
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