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Conductance quantisation in patterned gate In₀.₇₅GA₀.₂₅AS up to 6  ×  (2e²/h)

Gul, Y; Creeth, G; English, D; Holmes, SN; Thomas, K; Farrer, I; Ellis, DJP; ... Pepper, M; + view all (2019) Conductance quantisation in patterned gate In₀.₇₅GA₀.₂₅AS up to 6  ×  (2e²/h). Journal of Physics: Condensed Matter , 31 (10) , Article 104002. 10.1088/1361-648X/aafd05.

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Abstract

We present electrical measurements from In₀.₇₅GA₀.₂₅AS 1D channel devices with Rashba-type, spin–orbit coupling present in the 2D contact regions. Suppressed backscattering as a result of the time-reversal asymmetry at the 1D channel entrance results in enhanced ballistic transport characteristics with clear quantised conductance plateaus up to 6  ×  (2e ²/h). Applying DC voltages between the source and drain ohmic contacts and an in-plane magnetic field confirms a ballistic transport picture. For asymmetric patterned gate biasing, a lateral spin–orbit coupling effect is weak. However, the Rashba-type spin–orbit coupling leads to a g-factor in the 1D channel that is reduced in magnitude from the 2D value of 9 to ~6.5 in the lowest subband when the effective Rashba field and the applied magnetic field are perpendicular.

Type: Article
Title: Conductance quantisation in patterned gate In₀.₇₅GA₀.₂₅AS up to 6  ×  (2e²/h)
Location: England
DOI: 10.1088/1361-648X/aafd05
Publisher version: https://doi.org/10.1088/1361-648X/aafd05
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Rashba effect, spin-orbit coupling, ballistic transport, InGaAs material
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/10065881
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