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Growth and Fabrication of High-Quality Single Nanowire Devices with Radial p-i-n Junctions

Zhang, Y; Sanchez, AM; Aagesen, M; Huo, S; Fonseka, HA; Gott, JA; Kim, D; ... Liu, H; + view all (2019) Growth and Fabrication of High-Quality Single Nanowire Devices with Radial p-i-n Junctions. Small , 15 (3) , Article 1803684. 10.1002/smll.201803684. Green open access

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Abstract

Nanowires (NWs) with radial p-i-n junction have advantages, such as large junction area and small influence from the surface states, which can lead to highly efficient material use and good device quantum efficiency. However, it is difficult to make high-quality core–shell NW devices, especially single NW devices. Here, the key factors during the growth and fabrication process that influence the quality of single core–shell p-i-n NW devices are studied using GaAs(P) NW photovoltaics as an example. By p-doping and annealing, good ohmic contact is achieved on NWs with a diameter as small as 50–60 nm. Single NW photovoltaics are subsequently developed and a record fill factor of 80.5% is shown. These results bring valuable information for making single NW devices, which can further benefit the development of high-density integration circuits.

Type: Article
Title: Growth and Fabrication of High-Quality Single Nanowire Devices with Radial p-i-n Junctions
Open access status: An open access version is available from UCL Discovery
DOI: 10.1002/smll.201803684
Publisher version: https://doi.org/10.1002/smll.201803684
Language: English
Additional information: This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
Keywords: Contacts, devices, nanowires, photovoltaics, radial p-i-n junctions
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/10065120
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