Chen, S;
Tang, M;
Wu, J;
Jiang, Q;
Dorogan, V;
Benamara, M;
Mazur, YI;
... Liu, H; + view all
(2015)
Long-wavelength InAs/GaAs quantum-dot light emitting sources monolithically grown on Si substrate.
Photonics
, 2
(2)
pp. 646-658.
10.3390/photonics2020646.
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Abstract
Direct integration of III-V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III-V materials and Si substrates have fundamentally limited monolithic epitaxy of III-V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs) as dislocation filter layers (DFLs) to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 μm InAs/GaAs quantum dot (QD) laser that lases up to 111 °C, with a low threshold current density of 200 A/cm2 and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs) monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at ~1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III-V light emitters on Si substrates.
| Type: | Article |
|---|---|
| Title: | Long-wavelength InAs/GaAs quantum-dot light emitting sources monolithically grown on Si substrate |
| Open access status: | An open access version is available from UCL Discovery |
| DOI: | 10.3390/photonics2020646 |
| Publisher version: | https://doi.org/10.3390/photonics2020646 |
| Language: | English |
| Additional information: | This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
| Keywords: | quantum dot; semiconductor lasers; superluminescent light-emitting diodes; Si photonics; monolithic integration |
| UCL classification: | UCL UCL > Provost and Vice Provost Offices > UCL BEAMS UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng |
| URI: | https://discovery.ucl.ac.uk/id/eprint/10063326 |
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