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Gain Switching of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon

Hantschmann, C; Vasil'ev, PP; Chen, S; Liao, M; Seeds, AJ; Liu, H; Penty, R; (2018) Gain Switching of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon. Journal of Lightwave Technology , 36 (18) pp. 3837-3842. 10.1109/JLT.2018.2851918. Green open access

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Abstract

We report the first demonstration of gain-switched optical pulses generated by continuous-wave 1.3 μm InAs/GaAs quantum dot (QD) broad-area lasers directly grown on silicon. The shortest observed pulses have typical durations between 175 and 200 ps with peak output powers of up to 66 mW. By varying the drive current pulsewidth and amplitude systematically, we find that the peak optical power is maximized through sufficiently long high-amplitude drive pulses, whereas shorter drive pulses with high amplitudes yield the narrowest achievable pulses. A three-level rate equation travelling-wave model is used for the simulation of our results in order to gain a first insight into the underlying physics and the laser parameters responsible for the observed behavior. The simulations indicate that a limited gain from the InAs QDs and a very high gain compression factor are the main factors contributing to the increased pulsewidth. As the optical spectra of the tested broad-area QD laser give a clear evidence of multitransverse-mode operation, the laser's dynamic response could be additionally limited by transversal variations of the gain, carrier density, and photon density over the 50 μm wide laser waveguide.

Type: Article
Title: Gain Switching of Monolithic 1.3 μm InAs/GaAs Quantum Dot Lasers on Silicon
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/JLT.2018.2851918
Publisher version: https://doi.org/10.1109/JLT.2018.2851918
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Optical pulses, Silicon, Quantum dot lasers, Laser modes, Waveguide lasers, Substrates, photonic integrated circuits, semiconductor device modeling, silicon photonics
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/10059264
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