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Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate

Chen, W; Deng, Z; Guo, D; Chen, Y; Mazur, Y; Maidaniuk, Y; Benamara, M; ... Chen, B; + view all (2018) Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate. Journal of Lightwave Technology , 36 (13) pp. 2572-2581. 10.1109/JLT.2018.2811388. Green open access

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Abstract

In this paper, we have demonstrated the first InAs/InGaAs/GaAs quantum dots-in-a-well (DWELL) photodetector monolithically grown on silicon substrate. We studied both the optical and electrical characteristics of the DWELL photodetectors. Time-resolved photoluminescence spectra measured from the DWELL photodetector revealed a long carrier lifetime of 1.52 ns. A low dark current density of 2.03 × 10 -3 mA/cm 2 was achieved under 1 V bias at 77 K. The device showed a peak responsivity of 10.9 mA/W under 2 V bias at the wavelength of 6.4 μm at 77 K, and the corresponding detectivity was 5.78 × 10 8 cm·Hz 1/2 /W. These results demonstrated that these silicon-based DWELL photodetectors are very promising for future mid-infrared applications, which can enjoy the potential benefit from mid-infrared silicon photonics technology.

Type: Article
Title: Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/JLT.2018.2811388
Publisher version: http://dx.doi.org/10.1109/JLT.2018.2811388
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Telecommunications, Engineering, Infrared photodetector, quantum dots-in-a-well, silicon substrate, DETECTORS, LAYERS
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/10058952
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