Ahmed, I; Haigh, JA; Schaal, S; Barraud, S; Zhu, Y; Lee, CM; Amado, M; ... Gonzalez-Zalba, MF; + view all Ahmed, I; Haigh, JA; Schaal, S; Barraud, S; Zhu, Y; Lee, CM; Amado, M; Robinson, JWA; Rossi, A; Morton, JJL; Gonzalez-Zalba, MF; - view fewer (2018) Radio-Frequency Capacitive Gate-Based Sensing. Physical Review Applied , 10 (1) , Article 014018. 10.1103/PhysRevApplied.10.014018.

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Abstract

Developing fast, accurate, and scalable techniques for quantum-state readout is an active area in semiconductor-based quantum computing. Here, we present results on dispersive sensing of silicon corner state quantum dots coupled to lumped-element electrical resonators via the gate. The gate capacitance of the quantum device is placed in parallel with a superconducting spiral inductor resulting in resonators with loaded Q factors in the 400-800 range. We utilize resonators operating at 330 and 616 MHz, and achieve charge sensitivities of 7.7 and 1.3μe/Hz, respectively. We perform a parametric study of the resonator to reveal its optimal operation points and perform a circuit analysis to determine the best resonator design. The results place gate-based sensing on a par with the best reported radio-frequency single-electron transistor sensitivities while providing a fast and compact method for quantum-state readout.

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