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Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain

Mansir, J; Conti, P; Zeng, Z; Pla, JJ; Bertet, P; Swift, MW; Van de Walle, CG; ... Morton, JJL; + view all (2018) Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain. Physical Review Letters , 120 (16) , Article 167701. 10.1103/PhysRevLett.120.167701. Green open access

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Abstract

We experimentally study the coupling of group V donor spins in silicon to mechanical strain, and measure strain-induced frequency shifts that are linear in strain, in contrast to the quadratic dependence predicted by the valley repopulation model (VRM), and therefore orders of magnitude greater than that predicted by the VRM for small strains | ϵ | < 10 − 5 . Through both tight-binding and first principles calculations we find that these shifts arise from a linear tuning of the donor hyperfine interaction term by the hydrostatic component of strain and achieve semiquantitative agreement with the experimental values. Our results provide a framework for making quantitative predictions of donor spins in silicon nanostructures, such as those being used to develop silicon-based quantum processors and memories. The strong spin-strain coupling we measure (up to 150 GHz per strain, for Bi donors in Si) offers a method for donor spin tuning—shifting Bi donor electron spins by over a linewidth with a hydrostatic strain of order 10 − 6 —as well as opportunities for coupling to mechanical resonators.

Type: Article
Title: Linear Hyperfine Tuning of Donor Spins in Silicon Using Hydrostatic Strain
Open access status: An open access version is available from UCL Discovery
DOI: 10.1103/PhysRevLett.120.167701
Publisher version: https://doi.org/10.1103/PhysRevLett.120.167701
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Science & Technology, Physical Sciences, Physics, Multidisciplinary, Physics, Thermal-Expansion, Electron-Spin, Nuclear-Spin, Relaxation Processes, Shallow Donor, Semiconductors, States, Readout, Atom, Acceptors
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Maths and Physical Sciences > London Centre for Nanotechnology
URI: http://discovery.ucl.ac.uk/id/eprint/10053201
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