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High Performance Resistance Switching Memory Devices Using Spin-on Silicon Oxide

Ng, W; Mehonic, A; Buckwell, M; Montesi, L; Kenyon, AJ; (2018) High Performance Resistance Switching Memory Devices Using Spin-on Silicon Oxide. IEEE Transactions on Nanotechnology , 17 (5) pp. 884-888. 10.1109/TNANO.2017.2789019. Green open access

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Abstract

In this paper, we present high performance resistance switching memory devices (RRAM) with an SiO 2 -like active layer formed from spin-on hydrogen silsesquioxane (HSQ). Our metal-insulator-metal (MIM) devices exhibit switching voltages of less than 1 V, cycling endurances of more than 10 7 cycles without failure, electroforming below 2 V and retention time of resistance states of more than 10 5 seconds at room temperature. We also report arrays of nanoscale HSQ-based RRAM devices in the form of multilayer nanopillars with switching performance comparable to that of our thin film devices. We are able to address and program individual RRAM nanopillars using conductive atomic force microscopy. These promising results, coupled with a much easier fabrication method than traditional ultra-high vacuum based deposition techniques, make HSQ a strong candidate material for the next generation memory devices.

Type: Article
Title: High Performance Resistance Switching Memory Devices Using Spin-on Silicon Oxide
Open access status: An open access version is available from UCL Discovery
DOI: 10.1109/TNANO.2017.2789019
Publisher version: https://doi.org/10.1109/TNANO.2017.2789019
Language: English
Additional information: This work is licensed under a Creative Commons Attribution 3.0 License. For more information, see http://creativecommons.org/licenses/by/3.0/.
Keywords: Analog memory, atomic force microscopy, dielectric films, nanofabrication, resistive RAM, silicon compounds
UCL classification: UCL > Provost and Vice Provost Offices
UCL > Provost and Vice Provost Offices > UCL BEAMS
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science
UCL > Provost and Vice Provost Offices > UCL BEAMS > Faculty of Engineering Science > Dept of Electronic and Electrical Eng
URI: http://discovery.ucl.ac.uk/id/eprint/10041827
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