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Extended Hubbard model for mesoscopic transport in donor arrays in silicon

Le, NH; Fisher, AJ; Ginossar, E; (2017) Extended Hubbard model for mesoscopic transport in donor arrays in silicon. Physical Review B , 96 (24) , Article 245406. 10.1103/PhysRevB.96.245406. Green open access

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Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous donors in silicon due to the strong intersite interaction in the system. We also study the resonant tunneling transport in the array at low temperature as a mean of probing the features of the Hubbard physics, such as the Hubbard bands and the Mott gap. Two mechanisms of localization which suppresses transport in the array are investigated: The first arises from the electron-ion core attraction and is significant at low filling; the second is due to the sharp oscillation in the tunnel coupling caused by the intervalley interference of the donor electron's wave function. This disorder in the tunnel coupling leads to a steep exponential decay of conductance with channel length in one-dimensional arrays, but its effect is less prominent in two-dimensional ones. Hence, it is possible to observe resonant tunneling transport in a relatively large array in two dimensions.

Type: Article
Title: Extended Hubbard model for mesoscopic transport in donor arrays in silicon
Open access status: An open access version is available from UCL Discovery
DOI: 10.1103/PhysRevB.96.245406
Publisher version: http://doi.org/10.1103/PhysRevB.96.245406
Language: English
Additional information: ©2017 American Physical Society. This version is the version of record. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: Science & Technology, Physical Sciences, Physics, Condensed Matter, Physics, QUANTUM-DOT, DOPANT ATOMS, TRANSISTOR, SIMULATION
URI: http://discovery.ucl.ac.uk/id/eprint/10041307
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