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MBE growth of 1.7eV Al_{0.2}Ga_{0.8}As and 1.42eV GaAs solar cells on Si using dislocations filters: an alternative pathway toward III-V/Si solar cells architectures

Onno, AL; Tang, M; Wang, M; Maidaniuk, Y; Benamara, M; Mazur, YI; Salamo, GJ; ... liu, H; + view all (2017) MBE growth of 1.7eV Al_{0.2}Ga_{0.8}As and 1.42eV GaAs solar cells on Si using dislocations filters: an alternative pathway toward III-V/Si solar cells architectures. In: Proceedings of IEEE Photovoltaic Specialists Conference 2017. IEEE (In press).

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Abstract

Metamorphic epitaxial growth of III-V solar cells on Si has attracted significant interest for the development of III V/Si photovoltaic architectures. In this work, we present an alternative pathway – using MBE growth techniques – based on the direct nucleation of Al_{x}Ga_{1-x}As materials on Si, followed by the growth of a 1.7eV Al_{0.2}Ga_{0.8}As or a 1.42eV GaAs solar cell. Dislocation Filter Layers (DFLs), in conjunction with Thermal Cycle Annealing (TCA), have been used to reduce the Threading Dislocation Density (TDD) below 10^{7}cm^{-2} in the base of the cell; close to the best results demonstrated with metamorphic buffers.

Type: Proceedings paper
Title: MBE growth of 1.7eV Al_{0.2}Ga_{0.8}As and 1.42eV GaAs solar cells on Si using dislocations filters: an alternative pathway toward III-V/Si solar cells architectures
Event: IEEE Photovoltaic Specialists Conference - 2017
Location: Washington D.C., USA
Dates: 25 June 2017 - 30 June 2017
Language: English
Additional information: This version is the author accepted manuscript. For information on re-use, please refer to the publisher’s terms and conditions.
Keywords: III-V on Silicon, Molecular Beam Epitaxy, Threading dislocation density, Photovoltaic solar cells
UCL classification: UCL > School of BEAMS
UCL > School of BEAMS > Faculty of Engineering Science
URI: http://discovery.ucl.ac.uk/id/eprint/10034034
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